| PART |
Description |
Maker |
| 3DD2103 3DD2103-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2103 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5038 3DD5038-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5038 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5044 3DD5044-O-AL-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5044 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD2102-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2102 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD2901-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2901 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| IRG4PC40KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| IRG4PH20KPBF IRG4PH20KPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| IRGR3B60KD2 IRGR3B60KD2PBF |
600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| MGY25N120D_D ON1933 MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
From old datasheet system
IGBT & DIODE IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
|
ONSEMI[ON Semiconductor]
|
| IRGBC30K-S |
Aluminum Polymer SMT Capacitor; Capacitance: 150uF; Voltage: 4V; Case Size: 6.3x6 mm; Packaging: Tape & Reel
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
| BUZ100S Q67040-S4001-A2 |
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
SIPMOS ? Power Transistor
|
SIEMENS AG
Siemens Semiconductor Group
Infineon
http://
|
